原子氢刻蚀Si衬底产生的微蚀坑对金刚石成核的阻止效应

Obstraction Effect of Minute Etching Pits on Si Substrates from Atomic Hydrogen Etching on Diamond Nucleation

本文提出了在低压气相生长金刚石薄膜系统中，Ｓｉ衬底表面微蚀坑对金刚石成核的阻止效应，较好地解释了实验上发现的原子氢刻蚀Ｓｉ衬底产生的微缺陷对金刚石成核破坏作用的机理。

In this paper,the obstraction effect of minute etching pits on Si substrates on diamond nucleation have been put forward in diamond films growth by low pressure vapor phase methods,The phenomenon that minut defects from atomic hydrogen etching Si substrates damage diamond nucleation by experiment found was reasonably explained