陶瓷基材上金刚石薄膜的微观结构与界面研究

Microstructure and Interface of Diamond Film Deposited on Ceramic Substrates

用透射电子显微镜研究了用热丝法在Ｓｉ＿３Ｎ＿４－ＳｉＣ＿ｗ，ＡｌＮ陶瓷基材上生长的金刚石薄膜的显微结构和金刚石膜－基片界面。结果表明，金刚石膜内有大量的（１１１）孪晶，堆垛层错和位错。Ｓｉ＿３Ｎ＿４－ＳｉＣ＿ｗ基材上的金刚石膜的晶粒细小，有沿基材表面的条纹状的晶粒生长。界面研究表明ＡｌＮ基材上膜－基界面处有两种形核方式：无明显过渡层时，金刚石晶粒呈锥状生长，晶粒间留有孔洞；有界面过渡层时呈柱状生长。

In this paper,the microstructure and film-substrate interface of diamond film deposited on Si_3N_4-SiC_w,AlN ceramics by hot filament chemical vapor deposition(HFCVD)were investigated by using transition electron microscopy. The results show that there are a quantity of {111} twins, stacking faults and dislocations in the diamond films : the grain size of diamond on Si_3N_4- SiC_w, substrate is fine, and there are some strip crystal grains growing along the substrate surface. Interface study results manifest that there are two kinds of nucleation styles on the film-substrate interface : the one no obvious interface layer, the diamond crystal grows as the cone shaped, some holes leaves between the crystal grains , the another there are obvious interface layer, they grows as the column shaped. Finally,it is pointed out that the increasing of the nucleation density is a method to increase the film to substrate adhesion.