摘要
本文分析及研究了作者对绝缘栅ＰＭＯＳ场效应结构所进行的ＳＵＰＲＥＭ—ＳＥＤＡＮ联机模拟．重点在衬底电阻率（掺杂浓度）与ＭＯＳ结构阈值电压之间的定量关系上得到了与实验完全一致的结果．同时，定量地描述了栅氧层中电离电荷的分布及其行为．揭示了上述效应的机理．
This paper analyses and researches into the SUPREM-SEDAV simulation to the covering-grid P-MOS field effect structure, from the quantitative relation ship between substrates resistivity and MOS structure threshold value, we have won the same result with test. At the same time,the distribution of ionization charges in grid oxide was described in quantitative The above-mentioned mechanism of effect was revealled.
出处
《山东科学》
CAS
1994年第2期19-22,共4页
Shandong Science
关键词
工艺模拟
场效应器件
绝缘栅
field effect
threshold value
technique simulate
semiconductor devicesimulate.
