摘要
我们研制成功一种新型亚微米边缘结,这种边缘型超导隧道结以半导体材料硅作为上、下电极间的隔离层。通过半导体层的正常电导可用来消除隧道结的滞后,使之不必另外并联电阻就可用来制造 SQUID 器件。我们用这种亚微米边缘结制成了 DC—SQUID,用两种不同方法测量了它的磁通噪声,并把测量结果与理论计算作了比较。
We fabricated a new type of submicro edging junction which use semiconductor silicon as isolating layer between base-electrode and upper-electrode.The normal conductivity through silicon layer could be used for the elimination of hysteretics of superconductive tunnel junction so that it may be used for SQUID application without the needs of resistive shunts.We constructed a DC-SQUID with this kind of submicro edging junctions, determined the flux noise, and compared them with the theoretical one.
出处
《低温与超导》
CAS
CSCD
北大核心
1989年第1期21-27,共7页
Cryogenics and Superconductivity
