摘要
用扫描电镜观察Si:H薄膜的剖面,发现用平板电极沉积的Si:H薄膜呈柱状结构,而用环形电极沉积的膜具有层状结构。喇曼谱和X射线谱表明,这两种结构对应于微晶相的存在。测定薄膜的暗电导与温度间的关系,发现薄膜的电导激话能为各向异性。联系耦合方式讨论了薄膜的生长机制。
The microstructure of the cross-section of Si:H films has been observed by scanning electron microscope. The results show that the microstructure of the films deposited by using plate electrodes are in the column-like shape and that of the films deposited by sling circular electrodes are in the layer-like shape. The results of Raman scattering spectra and X-ray spectra show that the two kinds of microstructure correspond to the existence of microcrystalline phase. The relation between dark conductivity and temperature of Si: H films has been determined. It was found that the conductance activation energy of these films is anisotropic. The growth mechanisms of the films related to coupling electrodes have been discussed.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1989年第1期82-88,共7页
Acta Energiae Solaris Sinica
