铝硅合金中共晶硅晶体生长方向的扫描电镜研究

Growth Direction of Silicon Crystal in Al-Si Eutectic Alloys Investigated by SEM

应用扫描电镜(SEM)观察经深蚀的铝硅共晶合金试样,研究硅晶体的生长前沿。结果表明:沿〈100〉生长是硅晶体固有的生长方式。共晶硅在变质前后均以固有生长方式生长,未有根本的改变。钠元素的变质作用可能在于改变硅晶体生长环境促使晶体生长速度加快,超过临界生长速度值,迫使共晶硅晶体的形态发生改变。

Growth frontiers of silicon crystal in Al-Si eutectic alloys have been investigated by means of scanning electron microscope. Results indicate that growing along <100> is inherent in silicon crystal. Its growth direction is unchanged before and after modification. Adding Na element would cause the growth velocity of silicon crystal to quicken.