离子注入吸杂技术中杂质的转移

THE DISPLACEMENT OF IMPURITIES IN THE ION IMPLANTATION GETTERING TECHNIQUE

研究了高剂量(7.5×10^(15))氩离子注入硅片背面的吸杂效应;吸杂效果由npn晶体管的漏电流,Iceo的降低得到证实;分别用SIMS及DLTS法测量吸杂前后杂质分布的变化。结果表明,Fe、Cr及Au等重金属杂质经吸杂处理后有效地从硅片正面的有源区转移到背面的损伤区,揭示了吸杂的实际过程。

The ion implantation gettering effect of Ar^+ implanted into the back-side of a silicon wafer has been studied. The dosage of argon is as high as 7.5×10^(15)cm^(-2). Its effectiveness was examined by the decrease of Iceo in npn transistors.The SIMS and DLTS methods have been used to study the displacement of impurities after Ar^+ is implanted. The results show that heavy metals such as Cr, Fe, and Au were concentrated in the damaged region near the back-side surface. It disclosed the real process of ion implantation gettering effect. The results are also discussed in this paper.