摘要
当脉冲辐照a-Si∶H膜的XeCl激光能量密度在240mJ/cm ̄2以上时,可引起被辐照膜发生明显的固相晶化;通过拉曼(Raman)散射谱、扫描电子显微照象(SEM)和紫外(UV)分光光度吸收谱的实验,研究了不同辐照条件、不同膜厚及各种膜结构试样的晶化效果;还研究了使用CO_2激光退火对被辐照膜的影响。结果表明,晶化膜的晶粒大小在0.1~1.0μm时,Raman位移为510cm ̄(-1)~517cm ̄(-1)、半峰高宽度为10cm ̄(-1)~15cm ̄(-1);a-Si∶H膜经XeCl激光辐照或CO_2激光退火后,都会增强晶化膜的吸收效率。
The XeCl pulse laser has been used to irradiat the hydrogenated amorphous silicon(a-Si:H)film. It was shown that the irradiated films were remarkably crystallized when the energydensity of laser was over 240 mJ/cm ̄2.The crystallization effect of irradiated sample of vaviousthickness,different structures, and diffenent pulse number has been researched by the Ramanscattering spectrum, scanning electron micruscope(SEM)and the ultra-violet spectrophotometer. Theannealing role of CO_2 Laser in the irradiated film was also described. The results show that the grainsizes are about0.1~1.0μm, the Raman shifts is between 510~517cm ̄(-1),and the FWHM is from10cm ̄(-1) to 15cm ̄(-1). The absorption efficiency of crystallized film is increased in the infrared regionafter irradiated by the XeCl laser or annealed by the CO_2 Laser.
出处
《四川大学学报(自然科学版)》
CAS
CSCD
1994年第1期57-63,共7页
Journal of Sichuan University(Natural Science Edition)
基金
国家自然科学基金
关键词
氢化非晶硅
脉冲激光
晶化
薄膜
hydrogenated amorphous silicon,pulse laser,crystallization.