直接光CVD法低温生长SiO＿2薄膜技术及其应用

LOW TEMPERATURE GROWTH TECHNIQUE OF SiO_2FILM BY DIRECT PHOTO-CVD METHOD AND ITS APPLICATIONS

使用自制的微波激励式真空紫外光化学汽相淀积设备，以硅烷和氧为反应气体，在３２～２２０℃的低温下，成功地淀积出了优质实用的ＳｉＯ＿２薄膜；测试结果表明，淀积膜的组分结构、主要光学及电学特性均与高温生长膜的相符，将该技术应用于某些晶体管及热敏打印元件的制作工艺中，已取得了明显的实用效果。

The SiO_2 films with high quality and utility in practice have been deposited successfullyby using the self-made device of microwave excited VUV light direct photo-CVD , and the reaction gasof SiH_4 and O_2 , at the temperature ranging from 32℃ to 220℃, The measured results demonstratedthat the component structure and the main optical and electric pr operties were consistent with thosegrown at high temperature, The obvious benefits have been obtained when this technique was used inthe production of some transistors and elements of thermal printer。