摘要
用反应蒸发法制备氧化锡薄膜,对各样品取相同的制备条件,然后,进行不同的后处理,用扫描电子显微镜观察各样品的表面形貌,分析研究,进行了初步探讨。
Thin film of tin oxide was prepared by reactive evaporating in this paper. The samples were annealed in argon and air at 300C respectively and were activated by D. C. glow discharge. Superficial morphology of the samples were observed by scanning electron microscopies. It can be seen the particles can be changed in their sizes by post-treatment methods.
出处
《苏州大学学报(自然科学版)》
CAS
1994年第3期241-243,共3页
Journal of Soochow University(Natural Science Edition)
关键词
氧化锡
反应蒸发
薄膜
半导体
Thin film of tin oxide ,reactive evaporating,superficial morphology.