摘要
根据半导体材料的性能参数,考虑光电压V和耗尽区宽度W的变化对光电流JL的影响,较严格地计算了CdS/CdTe和CdS/Cu2S两种异质结单晶薄膜太阳电池的光伏特性曲线。然后在的条件下,对由上述两种异质结构成的二重结太阳电池的CdTe、Cu2S厚度进行匹配,计算各种组合下二重结太阳电池的光伏特性曲线。理论证明最佳匹配厚度Hmax约为9.06μm,最大短路电流、开路电压、转换效率分别为14.22mAcm-2、1.3V和14、68%。
ccording to the performance parameters of semiconductor materials and considering the effects of photovoltage v, depletion layer width W and interface recombination loss on the photocurrent JL, we calculated the photovoltaic behaviours of single crystalline thin-film CdS/CdTe and GdS/Cu2S heterojunction solar cells. The thickness of two fold junction solar cell which consisted of two single-junction cell was matched under conditions of . At the end. we calculated the photovoltaic behaviours of two fold junction solar cell in various matched conbinations.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1994年第1期50-56,共7页
Acta Energiae Solaris Sinica
基金
冶金部有偿资助
关键词
异质二重结
太阳能电池
薄膜
CdS/CdTe-CdS/Cu_2S, two fold heterojunction, solar cell