摘要
研究了4种复合氧化物(PbO-Bi2O。-B2O3,MnO-Bi2O3,Na2O-SiO2和LiNbO3)为扩散剂对半导化的SrTiO3基陶瓷显微结构、压敏和介电特性的影响.在实验基础上,提出了新的晶界势垒模型.
The influence of four composite oxides (PbO-Bi2O3-B2O3, MnO-Bi2O3,Na2O-SiO2 and LiNbO3) as diffusants on the microstructure and voltage-sensitive characteristics of SrTiO3-based semiconductor ceramies was studied and a new potential barrier model on grain boundary was proposed. A series of multi-functional materials with perfect voltage-sensitive and dielectric performance were obtained.
出处
《天津大学学报》
EI
CAS
CSCD
1994年第6期698-706,共9页
Journal of Tianjin University(Science and Technology)
关键词
半导体陶瓷
复合氧化物
晶界势垒
semiconductor ceramics, composite oxides,grain-boundary potential barrier