溅射过程中氧分压对SiO_2薄膜程膜的影响

THE INFLUENCE OF OXYGEN PARTIAL PRESSURE ON SiO2 FILMS DURING DEPOSITION BY RF REACTIVE MAGETRON SPUTTERING

该工作采用光电子能谱、扫描电镜等方法研究了溅射镀膜条件对成膜质量的影响，说明溅射制膜时氧化压不能超过１３％，同时氧分压过低也对电子加速不利。

The core lene spectra(XPS)and electron microscpe have been used to analysethe condition of rf reactive magetron sputtering method on growth of SiO2 films, In orderto get perfect noncrystal SiO2 films, the oxygen pressure must be less than 13%and if theoxygen partial pressure is zero, the film grown in the condition could not allow electronaccelerate in it.