在［311］面上直接生长GaAs／AlAs的量子线结构及其光学性质

Quantum well-Wire structure directly grown on [311] surface and its optical properties

本文介绍在分子束外延系统中，沿［３１１］面原位生长ＧａＡｓ／ＡＩＡｓ量子线结构的一种简单方法及其拉曼和发光特性。这一方法能克服目前纳米尺度光刻技术的困难，因此，是一种制备低维样品的有希望的方法。

In this paper，a simple method grown in situ GaAs／AlAs quantum well wire strcture along [311] surface in MBE system and its Raman and lu-minescence properties are presented.This method can overcome the present difficulties associated with the nanoscale lithographic technique，thus，it is a hopeful method to fabricate the low dimension sample.