一种智能功率集成电路隔离技术

An Isolation Technology for Smart Power IC's

本文介绍一种智能功率集成电路（高边ＣＭＯＳ模拟开关）的隔离技术。对除开关管ＶＤＭＯＳ管以外的器件采用自隔离技术，ＶＤＭＯＳ管不是自隔离的。衬底电势的变化易引起电路闭锁，采用浮阱技术来防止电路闭锁。

n isolation technology for smart power IC's (high-side CMOS analog switch) is presentedin the paper.Selfisolation is adopted for all the devices in the study except VDMOS transistors. Floating well has been used to prevent thecircuit from latching-up,which can be easily caused by variations in subetrate potentiais.