高阻硅中深能级与少子寿命的研究

A Study on Deep-Level and Minority-Carrier Lifetime for High Resistivity Silicon

本文测量了ｎ型高阻硅在９种不同浓度的金掺杂前后少子寿命的变化，以及两类不同电阻率的ｎ型高阻硅在７种不同辐照剂量的１ＭｅＶ高能电子辐照前后少子寿命的变化；测量了金掺杂和高能电子辐照在硅中引入的主要深能级；研究对比金掺杂和高能电子辐照对硅单晶性能的影响及其在提高电子器件开关速度方面的应用。

Changes in minority-carrier lifetime for n-type high resistivity silicon before and after Au doping at 9 differ-ent concentrations and changes in the lifetime of minority carriers in two kinds of n-type high resistivity silicon before and after 1MeV high-energy electron irradiation at 7 different dosages have been measured.Main deep levels introduced by Au doping and high energy irradiation have been determined. The effects of Au doping and high energy radiation on the properties of the silicon are investigated. Their applications in the improvement of the switching speed of electronic de-vices are discussed.