摘要
本文分析了SiO_2膜的针孔模型及漏电机理,讨论了针孔密度的概念,并用EPW(乙二胺-邻苯二酚水溶液)法和漏电流法分析了针孔与漏电流的关系,给出了SiO_2膜无明显针孔的判据。
A Pin-hole model is presented,and current leakage mechanism for SiO_2 films is analyzed.The concept of pinhole density is discussed.The relationship between pinhole and leakage current is analyzed us- ing EPW(Ethyle-nediamine-pyrocatechol-Water)solution and leakage current method. The judgment condi- tion that no obvious pinholes are present in SiO_2 films has been obtained。
出处
《微电子学》
CAS
CSCD
1994年第6期60-64,共5页
Microelectronics