非晶硅发射区双极晶体管的低温特性

Low Temperature Characteristics of Si Bipolar Transistors With a-Si Emitter

本文研究了非晶硅发射区双极晶体管的低温特性，得出了如下结论：低温下电流增益随基区杂质浓度的上升而下降，不同于常规同质结双极晶体管的情况，集电极电流则随基区杂质浓度的上升而上升。这些结果将为低温双极晶体管的设计提供理论依据。

The low temperature characteristics of bipolar transistors with a-Si emitter has been investigat- ed.It is concluded that at low temperature,unlike conventional homogeneous junction bipolar transistors. current gain decreases with rising concentration in base doping,and the collector current in a-Si bipolar tran- sistors increases as doping level in the base increases. Thase results provides a theoretical basis for rational de- sign of low temperature bipolar transistors.