期刊文献+

Structural Characteristic of CdS Thin Films and Their Influences on Cu(In,Ga)Se_2(CIGS) Thin Film Solar Cells 被引量:4

CdS薄膜的结构特性及其对Cu(In,Ga)Se_2(CIGS)薄膜太阳电池的影响(英文)
下载PDF
导出
摘要 Deposition and structural characteristics of cadmium sulfide (CdS) thin films by chemical bath deposition (CBD) technique from a bath containing thiourea,cadmium acetate,ammonium acetate and ammonia in an aqueous solution are reported.Researches are made on the influence of the fundamental parameters including pH,temperature,and concentrations of the solution involved in the chemical bath deposition of CdS and titration or dumping of the thiourea solution on the structure characteristic of CdS thin films.The pH of the solution plays a vital role on the characteristic of the CdS thin films.The XRD patterns show that the change in the pH of the solution results in the change in crystal phase from predominant hexagonal phase to predominant cubic phase.The CdS thin films with the two different crystal phases have different influences on CIGS thin film solar cells.The crystal mismatch and the interface state density of the c-CdS(cubic phase CdS) and CIGS are about 1 419% and 8 507×10 12cm -2 respectively,and those of the h-CdS(hexagonal phase CdS) and CIGS are about 32 297% and 2 792×10 12cm -2 respectively.It is necessary for high efficiency CIGS thin film solar cells to deposit the cubic phase CdS thin films. 报道了CdS薄膜的CBD法沉积及其结构特性 ,其中的水浴溶液包括硫脲、乙酸镉、乙酸铵和氨水溶液 .研究了水浴溶液的 pH值、温度、各反应物溶液的浓度和滴定硫脲与倾倒硫脲等基本工艺参数对CdS薄膜结构特性的影响 .其中 ,溶液的pH值对CdS薄膜的特性起着关键的作用 .XRD图显示了随着溶液 pH值的变化 ,薄膜的晶相由六方相向立方相转变 .CdS薄膜的这两种晶相对CIGS薄膜太阳电池性能的影响不相同 .c CdS(立方相的CdS)与CIGS之间的晶格失配和界面态密度分别为 1 4 19%和 8 5 0 7× 10 12 cm-2 ,而h CdS(六方相的CdS)与CIGS之间的晶格失配和界面态密度则分别为 32 2 97%和 2 792× 10 12 cm-2 .高效CIGS薄膜太阳电池需要的是立方相CdS薄膜 .
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第2期225-229,共5页 半导体学报(英文版)
关键词 CDS CU(IN GA)SE2 cubic phase hexagonal phase CdS Cu(In,Ga)Se2 立方相 六方相
  • 相关文献

参考文献4

  • 1黎兵,冯良桓,郑家贵,蔡亚平,蔡伟,李卫,武莉莉.CdS薄膜的制备及其性能[J].Journal of Semiconductors,2003,24(8):837-840. 被引量:12
  • 2Sasikala G,Thilakan P,Subramanian C.Madification in the chemical bath deposition apparatus,growth and characterization of CdS semiconducting thin films for photovoltaic applications.Solar Energy Materials & Solar Cells,2000,62:275
  • 3Enrflquez J P, Mathew X.Influence of the thickness on structural,iptical and electrical properties of chemical both deposited CdS thin films.Solar Energy Materials & Solar Cells,2003,76:313
  • 4.[EB/OL].http:∥www.nrel.gov/ncpv/hotline.,.

二级参考文献6

  • 1崔海宁,冯力.化学水浴法沉积 CdS 多晶薄膜[J].太阳能学报,1996,17(2):189-191. 被引量:11
  • 2Pavaskar N R,Menezes C A,Sinha A P B. Photoconductive CdS films by a chemical bath deposition process. J Electrochem Soc,1977,124(5):743.
  • 3Chung G Y,Kim H D,Ahn B T,et al. Properties of CdS films prepared by the chemical mist deposition Process. Thin Solid Films, 1993,232: 28.
  • 4Meyer G ,Saura J. Undoped and indium-doped CdS films prepared by chemical vapour deposition. Mater Sci, 1993, 28(19) :5335.
  • 5Uda H, Ikegami S, Sonomura H. Structural and electrical properties of chemical-solution-deposited CdS films for solar cells. Jpn J Appl Phys,1990,29(1) :30.
  • 6Chu T L,Chu S S. Thin film Ⅱ -Ⅵ photovoltaics. Solid-State Electron, 1995,38(3) :533.

共引文献11

同被引文献58

  • 1段宇波,张弓,庄大明.水浴温度对化学浴沉积CdS薄膜性能的影响[J].中国表面工程,2010,23(5):21-26. 被引量:6
  • 2敖建平,孙云,刘琪,何青,孙国忠,刘芳芳,李凤岩.CIGS电池缓冲层CdS的制备工艺及物理性能[J].太阳能学报,2006,27(7):682-686. 被引量:14
  • 3周向东,李子亨,李志有.化学沉积法制备CdS纳米薄膜及成膜机理[J].吉林大学学报(理学版),2007,45(1):116-120. 被引量:6
  • 4刘琪,冒国兵,敖建平.化学水浴沉积时间对CdS薄膜性质的影响[J].功能材料,2007,38(6):968-971. 被引量:8
  • 5Neelkanth G Dhere. Toward GW/year of CIGS production within the next decade [J]. Solar Energy Mater Solar Cells, 2007,91(15-16) : 1376.
  • 6Wagner S, Shay J L, Migliorato P. CulnSe2/CdS hetero- junction photovoltaic detectors[J]. Appl Phys Lett, 1974, 25:434.
  • 7Mickslsen R A, Chen W S. Polycrystalline thin films CulnSc solar cells[C]// Proc IEEE PVSC. San Diego, California 1982.
  • 8Potter R R, Eberspacher C, Fabick L B. Device analysis of CuInSe2/(Cd, Zn)S/ZnO solar cells [C] //18th IEEE Pho- tovoltaic Specialists Conference, Las Vegas: IEEE Pisca- taway, 1985 : 659.
  • 9lngrid Repins, Miguel A Contreras, et al. 19. 9 efficient ZnO/CdS/Cu(In, Ga)Se2 solar cell with 81. 20/oo fill factor [J]. Prog Photovolt: Res Appl, 2008,16 : 235.
  • 10Semiconductor-Today. ZSW raises its thin-film solar cell efficiency record to 20. 3//00[EB/OL]. http://www. semi-conductor-today, corn/news - items/2010/AUG/ZSW 230810. htm.

引证文献4

二级引证文献11

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部