摘要
在SIMOX衬底上制备了H形栅和环形栅PDSOInMOSFETs,并研究了浮体效应对辐照性能的影响 .在10 6rad(Si)总剂量辐照下 ,所有器件的亚阈特性未见明显变化 .环形栅器件的背栅阈值电压漂移比H型栅器件小33% ,其原因是碰撞电离使环形栅器件的体区电位升高 ,在埋氧化层中形成的电场减小了辐照产生的损伤 .浮体效应有利于改进器件的背栅抗辐照能力 .
H-gate and closed-gate PD SOI nMOSFETs are fabricated on SIMOX substrate,and the influence of floating body effect on the radiation hardness is studied.All the subthreshold characteristics of the devices do not change much after radiation of the total dose of 106rad(Si).The back gate threshold voltage shift of closed-gate is about 33% less than that of H-gate device.The reason should be that the body potential of the closed-gate device is raised due to impact ionization,and an electric field is produced across the BOX.The floating body effect can improve the radiation hardness of the back gate transistor.
关键词
浮体效应
辐照
SOI
floating body effect
radiation hardness
SOI
