摘要
提出了一个均匀、阶梯和线性掺杂漂移区SOI高压器件的统一击穿模型 .基于分区求解二维Poisson方程 ,得到了不同漂移区杂质分布的横向电场和击穿电压的统一解析表达式 .借此模型并对阶梯数从 0到无穷时器件结构参数对临界电场和击穿电压的影响进行了深入研究 .从理论上揭示了在厚膜SOI器件中用阶梯掺杂取代线性漂移区 ,不但可以保持较高的耐压 ,而且降低了设计和工艺难度 .解析结果。
A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.
基金
国家自然科学基金资助项目 (批准号 :60 2 760 40 )~~
