摘要
利用金属有机气相淀积方法生长了一种新型吸收体 :高反射率半导体可饱和吸收镜 .用这种吸收体兼作端镜 ,实现了 1 0 4 4 μm半导体端面泵浦Yb∶YAB激光器被动锁模 ,脉冲宽度为 3 0 5 ps ,重复率为 375MHz ,输出功率为 4 5mW .
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3 05ps at 1 044μm.The pulse frequency is 375MHz;the output power is 45mW.
