RTD与PHEMT集成的几个关键工艺

Several Key Processes for Integration of Resonant Tunneling Diodes and Pseudomorphic High Electron Mobility Transistors

在新型的共振隧穿二极管 (RTD)器件与PHEMT器件单片集成材料结构上 ,研究和分析了分立器件的制作工艺 ,给出了分立器件的制作工艺参数 .利用上述工艺成功制作了RTD和PHEMT器件 ,并在室温下分别测试了RTD器件和PHEMT器件的电学特性 .测试表明 :在室温下 ,RTD器件的峰电流密度与谷电流密度之比提高到1 78;PHEMT器件的最大跨导约为 12 0mS/mm ,在Vgs=0 5V时的饱和电流约为 2 70mA/mm .这将为RTD集成电路的研制奠定工艺基础 .

Based on the new material structure for the integration of RTD devices and PHEMT devices,the fabrication processes of separate devices are systematically investigated and analyzed,and processes parameters are given.Besides,RTD devices and PHEMT devices according to these processes are fabricated successfully,and the electronics characteristics of fabricated RTD devices and PHEMT devices at room temperature are tested,respectively.These results show that the peak-to-valley current density ratio (PVCR) is increased to 1 78,the maximum transconductance is 120mS/mm and saturated current at V gs=0 5 is 270mA/mm.The research will be helpful to establish the complete processes for integration of RTD devices and PHEMT devices.