摘要
报道了国内首次研制成功的GaN基蓝紫光激光器的材料外延生长、器件工艺和特性 .用MOCVD生长了高质量的GaN及其量子阱异质结材料 ,以及异质结分别限制量子阱激光器结构材料 .GaN材料的X射线双晶衍射摇摆曲线 (0 0 0 2 )对称衍射和 (10 12 )斜对称衍射半宽分别为 180″和 185″ ;3μm厚GaN薄膜室温电子迁移率达到85 0cm2 /(V·s) .基于以上材料 ,分别成功研制了室温脉冲激射增益波导和脊型波导激光器 ,阈值电流密度分别为 5 0和 5kA/cm2 ,激光发射波长为 4 0 5 9nm ,脊型波导结构激光器输出光功率大于 10 0mW .
Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180″ and 185″ for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405 9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.
基金
国家高技术研究发展计划资助项目 (编号 :2 0 0 1AA3 13 10 0 )~~
关键词
有机化学气相沉积
GAN基激光器
多量子阱
脊形结构
阈值电流密度
metalorganic chemical vapor deposition
GaN-based laser diodes
multiple quantum wells
ridge geometry structure
threshold current density
