CMOS／SOS器件亚阈区的总剂量电离辐照特性

Total Dose Radiation Characteristics at Subthreshold Range of CMOS/SOS Device

采用Ｉ－Ｖ亚阈测量技术，分析了封闭栅和条形栅结构ＣＭＯＳ／ＳＯＳ器件的ｌｏｇＩ－Ｖ曲线亚阈斜率和阈电压的总剂量电离辐照特性，以及不同的辐照偏置条件对上述两个电参数的影响。结果表明，在总剂量辐照下，封闭棚和条形栅ＣＭＯＳ／ＳＯＳ器件的阈电压及ｌｏｇＩ－Ｖ曲线亚阈斜率的变化趋势基本相同。

The thereshold voltage and subthreshold slope function of log (I)-V curve of edgeless gate and typical gate CMOS/SOS device were analysed with I-V subthreshold measuring technique after total dose radiation.The different hiss of gate was applied during radiation. The results indiCated that the shift of threshold voltage of edgeless CMOS/SOS is almost the same with that of typical CMOS/SOS for total dose radiation, so is the slope function of log (I)-V curve.