摘要
随着集成电路特征尺寸的不断缩小,器件结构越来越复杂,应用电子显微分析技术对IC的特定部位进行高空间分辨率的微结构分析,已成为IC新产品、新结构设计,新工艺开发和芯片生产质量保证的重要手段.结合深亚微米IC结构电子显微分析所涉及的FIB定位制样和TEM高分辨成像等关键技术的讨论,分析了一种新型的分立栅结构的深亚微米非挥发性闪烁存储器集成电路芯片(FlashNVMIC)的微结构特征,并从结构角度比较了其与堆叠栅结构FlashIC的性能.
High resolution microanalysis of special parts of IC using electron microscopy has become one of the most important methods for the design of new IC product and structure design, development of new process, and chip quality assurance as well. In the present paper FIB location, sample preparation, and high resolution TEM imaging of sub-micron ICs are investigated, the micro-structure characteristic and performance of a new sub-micron NVM split-gate flash IC are analyzed.
出处
《复旦学报(自然科学版)》
CAS
CSCD
北大核心
2005年第1期80-84,共5页
Journal of Fudan University:Natural Science