一种MFIS类结构的阈值电压新模型及其C—V特性分析

A New Threshold Voltage Model and Research on C-V Property of MFIS Structure

采用物理和数学分析相结合的方法,构建了MFIS结构阈值电压的一种新的解析模型,对此解析模型的分析表明,铁电材料的介电常数越低,电滞回线的矩形度越好,MFIS结构的存储特性越好.由该模型进一步得到了MFIS结构的C—V曲线,对C—V曲线物理过程的分析表明,工作频率以及铁电电滞回线是否饱和对C—V特性有较大影响,而C—V曲线的窗口与MFIS结构存储特性密切相关.

Based on physics and mathematical analysis, a new analytical model of MFIS threshold voltage is obtained. It is indicated from the threshold voltage model that the lower the dielectric constant of ferroelectrics film and the better the rectangle ratio of hysteresis loop is, the better the MFIS memory performance will be. Meanwhile the corresponding C-V curve is also obtained. Analysis of C-V curve shows, frequency and saturation of the loop affect C-V property obviously, and C-V window and MFIS memory capability are closely related.