IC制造工艺与光刻对准特性关系的研究

Researches on the Relationship of IC Manufacturing Process and Lithography Alignment

针对光刻对准特性,从单项工艺和工艺集成的角度,分析了影响光刻对准的各个主要因素,包括对准标记、工艺层、隔离技术等,提出了一些改善光刻对准效果的方法。

This paper studies the relationship of integrate circuit manufacturing process and lithography alignment. Some key factors, such as alignment masker, process layer and isolation technology are included, along with the ways of improving the alignment accuracy of photolithography.