摘要
本文对热灯丝(热电子)辅助射频等离子体CVD法制备的立方氮化硼(c-BN)薄膜进行了研究。实验结果表明,c-BN膜的质量与膜沉积条件有密切的关系。并对其结果作了简要讨论。
Cubic boron nitride(c-BN)films by thermal filament assisted RF CVDhave been studied. Experimental results have shown that the quality ofc-BN films closely depends on the deposition conditions of the films,Theresults have been discussed briefly.
出处
《微细加工技术》
1994年第2期47-50,共4页
Microfabrication Technology
基金
国家自然科学基金