摘要
本文针对无铬掩模方式，从计算机摸拟和实验两个方面，研究了ＫｒＦ准分子激光（λ＝２４８ｎｍ）接触式移相曝光。得到了０．１μｍ的正胶线条。得出了在接触式相干平行光照射下，移相器与基片间距对光刻线条宽窄有很大影响的结论，并通过将移相器直接做在基片上，给出了移相器紧贴基片的可靠方法。
Phase-shifting lithography by the chromeless transparent phasc-shiftingmask and KrF excimer laser(λ=248nm)are studied in both experiments andsimulations,The photoresist patterns of 0.1μm are achieved, The simulationsshow that the gap between the shifter and the substrate has a significantinfluence on the line width of photoresist in the case of contact phase-shiftinglithography. A method making the shifter close contact to the substrate isproposed in this paper
出处
《微细加工技术》
1994年第4期36-42,共7页
Microfabrication Technology
