SF_6／CCl_2F_2反应离子深刻蚀硅中加O_2的研究

STUDY ON DEEP REACTIVE ION ETCHING OF SILICON USING SF_6/CCl_2F_2 WITH O_2 ADDITION

用ＳＦ＿６／ＣＣｌ＿２Ｆ＿２加Ｏ＿２混合气体，在普通的平板型反应离子刻蚀机上，进行了深刻蚀硅的研究。当掩膜厚度约１２０ｎｍ－１５０ｎｍ的Ｃｒ薄膜时，研究了Ｏ＿２在混合气体中的比例对刻蚀形貌和刻蚀速率的影响。用获得的各向异性刻蚀工艺，己刻蚀出高度为１０μｍ的硅台阶，台阶倾角小于５°，横向腐蚀约为０．５μｍ，刻蚀表面粗糙度约１０％。

Deep reactive ion etching of silicon using SF_6/CCl_2F_2 with O_2 Addition on a ordinary parallel plate etcher is reported,While a Cr film(depth = 120nm-150nm)is used as the etching mask,we have studied the etching profiles and the etching rates with different ratios of O_2 addition,Using this anisotropical etching technique, we have etched silicon steps with depth of 10μm,lateral etching of 0.5μm,surface average roughness of 10%,angle of inclination less than 5°。