在ICE设备上进行低材料灰化技术(英文)

Ashing Technology for Low-k Using ICE

为满足半导体产品的高性能化,Low-k穴低导电雪材料正被使用于层间绝缘膜,但是Low-k材料在灰化穴Ashing雪过程中由于高温及氧自由基穴O-radical雪的作用而引起材质变化导致导电率上升的问题的发生。为解决这个问题,在ICE设备上开发了灰化Low-k周边的低温处理工艺。Low-k导电率变化系在Low-k表面生成高导电率氧化层所致,所以为减少导电率变化须选择合适的离子源生成尽可能薄的氧化层是非常重要的且已被证明。在这里,Low-k灰化时导电率变化的机理,改善效果及相关运用作个介绍。

There have been attempts to use low dielectric materials(hereinafter referred to ss Low-k) as interlayer insulation film in order to achieve enhancement in the performance of semiconductor devices. However, there are problems in Low-k in that the heat and oxygen radicals cause change of properties and increase the dielectric constant during the ashing process.In order to solve these problems, a low temperature ashing process was developed for the periphery of Low-k using ICE.As a result, we found that changes in the dielectric constant of Low-k are caused by formation of an oxide layer of high dielectric constant on the Low-k surface and that to reduce the changes in the dielectric constant, selecting an optimum ion energy is important for forming as thin an oxide layer as possible on the Low-k surface.This paper will describe the mechanism of changes in the dielectric constant during Low-k ashing, the result of the improvements made, and other applications