摘要
We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improved by Electron Beam (EB) Cure technology. And also One time cure of stacked Low k is successful without any problem. On integration issue of Low k material, we demonstrated low damage resist strip process by using reducing gas chemistry and clarified mechanism of new Cu corrosion mode during CMP process.
We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improved by Electron Beam (EB) Cure technology. And also One time cure of stacked Low k is successful without any problem. On integration issue of Low k material, we demonstrated low damage resist strip process by using reducing gas chemistry and clarified mechanism of new Cu corrosion mode during CMP process.
出处
《电子工业专用设备》
2005年第3期69-73,共5页
Equipment for Electronic Products Manufacturing
