电子束加速器维纳尔的研究(英文)

Studies on Wehnelt of Electron-Beam Accelerator

由于电子束理论上可聚成直径小于 1nm的束斑 ,易于控制 ,在超大规模集成电路掩模制造中起的重要作用 ,目前仍无法用其他方法所代替 .以SDS 3电子束设备的电子枪为基础 ,讨论了双曲凹面加速器维纳尔 (外敷碱土金属氧化物盖 )的电子轨迹与能量分布 .通过这一维纳尔电子被送达硅片靶心 (置于光阑前 ) .最后给出了刻蚀硅片的束斑和加速器维纳尔的图 .

Electron beam can be focused into a small spot with the diameter of only about nanometers theoretically, and easily controlled. It cannot be replaced by any other micro fabrication techniques in mask-making of VLSI (Very Large-Scale Integration). Based on the electron gun of SDS-3 electron beam lithography machine, the concave hyperboloid Wehnelt (oxide-coated cover) of accelerator is discussed. The electron trajectories and potential distribution are given. Electrons from the gun accelerated by a high voltage reached a target of silicon piece (in front of the aperture) via the Wehnelt. Finally, spots of electron-beam in the silicon piece and the geometry schematics for Wehnelt of accelerator are given.