等离子增强化学气相淀积硅化钛薄膜的特性

Preparing Titanium Silicide Films by Plasma CVD Method

本文以四氯化钛（ＴｉＣｌ４）和硅烷（ＳｉＨ４）为源物质，采用等离子增强化学气相淀积（ＰＥＣＶＤ）工艺结合常规热退火制备了优良的ＴｉＳｉ２薄膜．研究了淀积和退火条件对薄膜性质的影响．用四探针检测了退火前后薄膜的薄层电阻，用俄歇电子能谱（ＡＥＳ）和Ｘ射线衍射分析了薄膜的化学组成和晶体结构．

TiSi2 thin films have been formed by plasma-enhanced chemical Vapor deposition followed by steadystate thermal annealing. The influence of deposition and annealing conditions on the characteristics oftitanium silicide films has been studied. The sheet resistance of TiSi2 film before/after annealing wasmeasured by Four-probe. The composition and structure of the film were analysed by AES and XRD.