射频功率对反应溅射淀积的a－Ge：H薄膜特性的影响

Effect of R.F.Power on the Properties of Reactive-Sputtering Hydrogenated AmorphousGermanium Film

本文通过红外透射谱（ＩＲ）、拉曼散射谱（Ｒａｍａｎ）、电子自族共振谱（ＥＳＲ）、光吸收谱、电导率和淀积速率的测量，比较全面地研究了射频功率对反应溅射法淀积的ａ－Ｇｅ：Ｈ薄膜特性的影响．发现ａ－Ｇｅ：Ｈ膜的淀积速率、氢量、膜结构、光电性能随功率发生规律性的变化．对实验结果作了初步讨论．

The effect of r.f power on the properties of a-Ge:H film by r.f. reactive-sputtering deposition wasinvestigated by using IR, Ramsn, optical absorption spectrum and electrical measurements. We discoveredthat hydrogen content, structure, optical and electrical with the variation of r.f power properties anddeposition rate of a-Ge:H films varied regularly. The experimental results were discussed preliminarily.