激光对吸附在Si(111)7×7和Si(100)2×1表面上的C_(60)的不同作用

Different effects of laser on C_(60) adsorbed on the Si(111)7×7 and Si(100)2×1 surfaces

本文利用超高真空扫描隧道显微镜(UHVSTM),在室温下研究沉积了约0 005ML的C60分子的Si(111)7×7和Si(100)2×1再构表面在波长为266nm的激光束轰击前后的表面形貌的变化。结果表明,在266nm的激光作用下,Si(111)7×7表面上的C60分子保持完好,表面缺陷明显增加,但并没有完全破坏7×7再构形貌;而Si(100)2×1表面上的C60分子却被打碎,样品表面变得杂乱无章。

The laser induced interaction of C_(60) molecules with Si(111) 7×7 and Si(100) 2×1 reconstruction surfaces were investigated using scanning tunneling microscopy. The morphology of C_(60) on Si(111) 7×7 and Si(100) 2×1 before and after bombarded with laser of wavelength of 266nm were compared. The results show that after laser bombarding the morphology of C_(60) molecules on the Si(111)7×7 surface were nearly unchanged, even there were clearly increasing defects of Si(111) 7×7 surface. On the contrary, the C_(60) molecules on the Si(100)2×1 surface were broken and the sample surface became very disorder.