RF磁控溅射技术制备TiO_(2-x)N_x薄膜及组成和结构研究

Compositional and structural properties of TiO_(2-x)N_x thin films deposited by RF magnetron sputtering

利用RF磁控溅射技术(Ar,N2和O2混合气体,Ti金属靶)制备TiO2-xNx薄膜.用XRD和XPS对其结构和组成进行表征,结果表明:在实验系统中的N2含量在13%～17%之间,可以得到高质量的TiO2-xNx薄膜,β-N为TiO2-xNx薄膜的主要成分;不同含N量的TiO2-xNx薄膜的结构和组成的光学催化活性不同.

TiO_(2-x)N_x thin films were deposited onto Si(100) and quartz substrates by radio frequency (RF) magnetron sputtering method using a titanium metal disk as a target in Ar, N_2, and O_2 atmospheres. The substrate temperature was kept at 300 ℃. The O_2 and Ar gas flow rates were kept constant and N gas flow rate was varied. TiO_(2-x)N_(x) films with different N content were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The results indicated that high-quality TiO_(2-x)N_x thin films were obtained at N_2 / (Ar + O_2 + N_2) = 13% and 17%. In terms of the results of X-ray photoelectron spectroscopy, N _(1s)of β-N (396 eV) was the main component in the TiO_(2-x)N_x thin films. Because the energy level of β-N was positioned above the Valence-Band Maximum (VBM) of TiO_2, an effective optical-energy gap decreased, which was verified by the optical-absorption spectra. Because TiO_(2-x)N_x thin films had a relatively small gap compared with TiO_2, and β-N was the active site for the photocatalyst under visible light, so that TiO_(2-x)N_x thin films could be applied on more extensive areas as the photocatalyst to provide more catalytic activity.