计算机硬盘基片的亚纳米级抛光技术研究

SUB-NANOMETER PRECISIONPOLISHING OF COMPUTER RIGIDDISK SUBSTRATE

随着计算机磁头与磁盘间隙的不断减小,硬盘表面要求超光滑(亚纳米级粗糙度)。化学机械抛光技术是迄今几乎唯一的全局平面化技术。研究了抛光液特性与计算机硬盘基片的化学机械抛光性能间的关系,结果表明,抛光后表面的波纹度(Wa)、粗糙度Ra)以及材料去除量强烈依赖于抛光液中磨粒的粒径、磨粒和氧化剂的浓度等因素。借助对抛光后表面的俄歇能谱(AES)分析,对其化学机械抛光机理进行了探讨。

With magnetic heads operating closer to hard disks, the hard disks are forced to be ultra-smooth. At present, chemical-mechanical polishing (CMP) has become a widely accepted global planarization technology. CMP(Chemical-mechan ical polishing) of computer rigid disk substrate in the slurry containing nano-scale SiO2 particle is studied. Results indicated that the average roughness (Ra) and the average waviness (Wa) of the polished surfaces as well as material removal amount were much dependent on the particle size and the contents of the particle and oxidant. Based on Auger electron spectrogram (AES) examinations of the chemical changes in the polished surfaces with the prepared slurry, the CMP mechanism is deduced preliminarily.