小尺寸MOS场效应管弱反型饱和特性

SATURATION CHARACTERISTICS OF SMALL GEOMETRY MOSFET'S

考虑到小尺寸MOS(金属-氧化物-半导体)场效应管耗尽区电荷和空间电荷的减少,推导出了小尺寸MOS场效应管弱反型漏极电流的解析表示式,用来描述漏极饱和电流随漏极电压上升而增大的现象,理论与实验符合得较好。本文结果可用于集成电路的计算机模拟设计中。

A weak-inversion drain-current model for small geometry MOSFET's is pre-sented. This model can be utilized for describe the saturation characteristics of drain current in small geometry MOSFET's. The theory is in agreement with experimental results. It is shown that the diminution of the space charge and depletion-layer charge in the semiconduc-tor is responsible for the poor saturation.