硅锥场发射阵列中离子轰击现象的分析

Analysis of Ion Bombardment in Si-FEA

离子轰击影响尖端场致发射器件的稳定性和工作寿命.阐述了数值模拟硅锥阴极离子轰击现象的基本理论,并以硅锥场发射阵列的一个单元结构为例模拟了气体-电子碰撞电离产生的正离子回轰尖端的全过程,对模型中的硅锥受损的位置和程度进行了分析,得出了一些结论.

Ion bombardment affects the stability and lifetime of micro-tip field emission devices. In the Si field emission array (FEA), the atoms in the residual gas may collide with electrons and be ionized, so many ions could be produced. Due to the electrical field in the FEA device, the ions bombard on the Si tips. This paper analyzes the mechanism of ion bombardment on the Si tip. The process concerning ion generation and ion bombardment is numerically simulated. The damage to the tip is analyzed quantitatively, and related conclusions are given.