摘要
During the crystal grown by VBM, the solid/liquid interface configurations greatly influence the quality of as-grown crystals. In this paper, finite element method (FEM) was used to simulate the growth process of CdZnTe crystal. The effects of different crucible moving rates and temperature gradient of adiabatic zone on crystal growth rate and solid-liquid interface configuration were studied as well. Simulation results show that when crucible moves at the rate of about 1mm/h, which is nearly equal to crystal growth rate, nearly flat solid/liquid interface and little variation of axial temperature gradient near it can be attained, which are well consistent with the results of experiments. CdZnTe crystal with low dislocation density can be obtained by employing appropriate crucible moving rate during the crystal growth process.
During the crystal grown by VBM, the solid/liquid interface configurationsgreatly influence the quality of as-grown crystals. In this paper, finite element method (FEM) wasused to simulate the growth process of CdZnTe crystal. The effects of different crucible movingrates and temperature gradient of adiabatic zone on crystal growth rate and solid-liquid interfaceconfiguration were studied as well. Simulation results show that when crucible moves at the rate ofabout 1 mm/h, which is nearly equal to crystal growth rate, nearly flat solid/liquid interface andlittle variation of axial temperature gradient near it can be attained, which are well consistentwith the results of experiments. CdZnTe crystal with low dislocation density can be obtained byemploying appropriate crucible moving rate during the crystal growth process.
基金
National Natural Science Foundation of China (10175040)
Foundation of Shanghai Education Committee(02AK30)
Key Subject Construction Project (Material Science) of Shanghai Education Committee
