摘要
Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.
Thick GaN films were grown on the sapphire substrate by hydride vapour phaseepitaxy. The properties of GaN films were found to be significantly influenced by the duration ofexposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystallinequality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on thenitridation time, which determined substrate surface topography. The different nitridationschemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the mainexcitonic peak in photoluminescence spectra at room temperature.
基金
National"863"Project of China (2001AA311100 and 2002AA305304)
Sino French Cooperation Project:CNRS/ASC Chine 2003 Project(14915)
