摘要
A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.
A new bipolar junction field-effect transistor (BJFET) was described. Thetheoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. Thegate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructivecharacteristic is relevant to structure parameters of channel width W and channel length L. Thedecrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turnin device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET hasa good high temperature obstructive characteristic and can be applying to high temperature statusas high voltage switch devices.
