摘要
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn’t SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model.
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn't SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1994年第8期737-740,共4页
Acta Physico-Chimica Sinica
基金
国家自然科学基金
关键词
多孔硅
光致发光
化学氧化
表面态
Porous silicon, Fourier transformed infrared transmission spectra, Photoluminescence, Photoluminescence mechanism
