直流磁控溅射YBCO非晶薄膜的卢瑟福背散射研究

RBS STUDY ON YBCO AMORPHOUS FILMS PREPARED BY D. C. MAGNETRON SPUTTERING

利用直流磁控溅射(D.C.Magnetron Sputtering)法,选取总气压为80Pa,沉积时间为60min,溅射靶尺寸为φ80,在磁场强度、靶与基片之间的距离及Ar/O_2比等参数变化的情况下,制备了四组YBCO/Al_2O_3非晶薄膜样品。用MeV Li卢瑟福背散射(RBS)分析技术,测量了各块样品中Ba和Cu相对Y的含量和薄膜厚度随基片的横向分布。分析结果表明:在不同的沉积条件下,薄膜中各点的Ba和Cu相对浓度差别较大,薄膜厚度分布也不均匀。其中一组样品,在薄膜中心两侧约17mm的区间内,薄膜厚度近似相等(～0.13μm),而且Y,Ba,Cu比例接近1:2:3。

By using D. C. magnetron sputtering and selecting the total gas pressure 80 Pa, the deposition time 60 min and the target size 80, four amorphous YBCO/Al2O3 films were prepared with varying parameters, such as magnetic intensity, distance from the target to the substrate, and partial pressure ratio Ar/O2. The Ba and Cu concentrations relative to Y and the film thickness versus substrate position in the four samples were analyzed by Rutherford backscattering (RBS). Results have showed that the relative concentation of barium and copper were quite different at different positions and the film thickness were not uniform under disparate deposition conditions. However, one of the samples has an almost even profile in a region of 17mm around the center of the sample, where the film thickness is approximately equal tc 0.13um and the Y, Ba. Cu ratios are close to 1:2:3.