多层溅射制备WSi＿x／Si薄膜的电阻率特性研究

ELECTRICAL PROPERTIES OF WSi_x/Si(111)FILMS BY MULTILAYER SPUTIERING

利用多层溅射技术制备了ＷＳｉ＿ｘ／Ｓｉ薄膜，然后测量其平面电阻的退火行为，发现平面电阻在６００－７００℃之间退火后有陡降，这对应于非晶ＷＳｉ＿ｘ薄膜中Ｗ＿５Ｓｉ＿３四角相的形成。ｘ射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化，它和薄膜结构的变化有很好的对应关系。

ungsten silicide films have been sputtered onto silicon substrate and annealedat temperature ranging from 400 to 1000℃ in vacuum.The structure and defect of each film is detected by X-ray diffraction(XRD)and positron annihilation techno-logy(PAT),respectively. The sheet resistance has been measured and the result in-dicates that the sheet resistance of films decrease steeply as a result of annealing in the range of 600-700℃. This phenomenon corresponds to the crystallization of W_5Si_3 tetragonal phase in films which has been certified by XRD.Electrical properties of films are sensitive to structure and defects in films and electrical measurement can be used as a good probe for the study on the characteristics of films.