零偏退火与反偏退火对含氢的Au／n－Si肖特基势垒的控制

CONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS BIAS ANNEALING AND REVERSE BIAS ANNEALING

〈１１１〉晶向的掺磷的ｎ型硅外延片经等离子进氢后连同未经等离子氢处理的对比片一起淀积金，制得Ａｕ／ｎ－Ｓｉ肖特基势垒。实验结果表明：氢能使Ａｕ／ｎ－Ｓｉ的肖特基势垒高度下降０．１３ｅＶ；含氢的肖特基势垒的高度可以被零偏退火与反偏退火所控制，即零偏退火使含氢的肖特基势垒的高度降低，而反偏退火使含氢的肖特基势垒的高度升高；而且零偏退火与反偏退火对肖特基势垒高的这种控制作用至少在三个循环过程中是可逆的。在反偏退火以后，含氢的肖特基势垒的高度升高的数值不仅与退火时所应用的偏置电压有关，而且与退火温度也有关。

Metal Au was deposited onto<111>oriented phosphorous doped n-type epitaxialsilicon wafers,with or without plasma hydrogen treatment,to form Au/n-Si Schot-tky barrier(SB).The experimental results indicate:hydrogen decreases the Schottkybarrier height(SBH)of Au/n-Si by0.13eV,the SBH of Schottcky barrier containinghydrogen(SB(H))can be controlled by zero bias annealing(ZBA)and reverse biasannealing(RBA),i.e. ZBA decreases and RBA increases the SBH of SB(H);and thecontrolling of SBH is reversible in at least three ZBA/RBA cycles.The increased SBHvalue of SB(H)after RBA is related not only to the reverse bias used in annealing but also to the annealing temperature.