浅杂质注入LEC半绝缘GaAsγ射线辐照缺陷

γRADIATION DEFECTS IN SEMI-INSULATING LEC GaAs AFTER SHALLOW IMPURITY IMPLANTATION

用深能级瞬态谱（ＤＬＴＳ）和恒温电容瞬态等技术研究了浅杂质注入ＬＥＣ半绝缘ＧａＡｓ的γ射线辐照缺陷。在Ｂｅ－Ｓｉ共注的ＬＥＣ半绝缘ＧａＡｓ中，γ射线辐照引入一电子陷阶Ｅ＿２，并且大大增强了原有的Ｅ＿（０１）（０．２９８）和Ｅ＿（０２）（０．３４１）等缺陷，同时明显地瓦解了原有的少子陷阱Ｈ＿（０３）。在单纯注Ｓｉ的ＬＥＣ半绝缘ＧａＡｓ中，γ射线辐阳引进了Ｅ＇＿（０１）（０．２１６），Ｅ＇＿（０２）（０．３４１），Ｅ＇＿２，Ｅ＇＿４和Ｅ＇＿５（０．６０８）等缺陷。其中Ｅ＿（０１）和Ｅ＇＿（０１）是新发现的和γ辐照有关的ＧａＡｓ缺陷。和低阻衬底同质外延ＧａＡｓ相比，Ｂｅ－Ｓｉ共注ＬＥＣ半绝缘ＧａＡｓ具有较低的γ射线辐照缺陷引入率，与此相反，单纯注Ｓｉ的ＬＥＣ半绝缘ＧａＡｓ具有较高的γ射线辐照缺陷的引入率。

The γradiation defects in shallow impurity implanted semi-insulating LECGaAs have been studied by the deep level transient spectroscopy(DLTS)and theconstant temperature capacitance transient technique.In Si-and Be-coimplanted semi-insulating LEC GaAs, there exists an electron trap E'_2 introduced by γ radiation,and both of the two original electron traps E_(01)(0.298)and E_(02)(0.341) are remarka-bly enhanced by the radiation, by contrast, the original hole trap H_(03) is greatly re-duced. There exist five electron traps,E'_(01)(0.216), E'_(02)(0.341), E'_2,E'_4 and E'_5(0.608),which are caused by γ radiation in Si single- implanted semi-insulating LEC GaAs.The E_(01) and E'_(01) are newly observed. By comparison with the GaAs grown epitaxiallyon a substract of GaAs with low resistivity, Si-and Be-coimplanted semi-insulatingLEC GaAs possesses a smaller introduced rate of γ radiation defects, but the Sisingle-implanted semi-insulating LEC GaAs has a bigger one.