摘要
少数载流子在Si-SiO_2界面的复合对双极器件的影响很大。文中通过对采用SiO_2膜和SiO_2-Si_3N_4双层膜一次钝化的电容(MOS和MNOS)和栅控外延NPN晶体管表面电特性的研究,发现SiO_2-Si_3N_4一次钝化膜能减小基区表面电流。文中建立了外延双极晶体管基区表面电流随栅区(或基区表面电势)变化的理论模型,该模型成功地解释了栅控外延双极晶体管的基区表面电流随栅压变化的实验曲线,从而为器件的计算机模拟提供了更加精确的模型.
The recombination of minority carriers at Si-SiO_2 interface has a great effect on bipolar de-vices. In this paper , the surface electrical property of capacitors(MOS or MNOS ) and gate-controlled NPN transistors which are passivated alternatively by SiO_2 and SiO_2-Si_3N_4 films arestudied and it is found that the SiO_2-Si_3N_4 dual dielectrica films can reduce the surface currentin the base region. An improved theoretical model of the base surface current vs. surface po-tential or gate voltage is set up on the basis of the work of Ref.[3] for epitaxial bipolar transis-tors. The model successfully explains the experimental results of the variation of the base sur-face current of the gate-controlled epitaxial bipolar NPN transistors with the gate voltage andprovides a more accurate model for the computer simulation of the devices.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
1994年第2期162-167,共6页
Journal of Xidian University
关键词
双极晶体管
模型
基区
表面电流
bipolar transistor
surface recombination
model
base surface cur-rent
first passivation